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GaN Templates 2 & 4 inch

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GaN Templates 2 & 4 inch

Product Details:

Place of Origin:China
Description

2 inch GaN Templates:

Dimensions:Ф 50.8mm ± 0.1mm
Thickness:4 µm, 20 µm; 4 µm
Orientation:C-plane(0001) ± 0.5°
Conduction Type:N-type(Undoped); N-type(Si-doped); P-type(Mg-doped)
Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm; ~ 10 Ω·cm
Carrier Concentration: < 5x1017 cm-3; > 1x1018 cm-3; > 6x1016 cm-3
Mobility: ~ 300cm2/V·s; ~ 200 cm2/V·s; ~ 10 cm2/V·s
Dislocation Density: Less than 5x108 cm-2
Substrate structure: GaN on Sapphire (Standard: SSP Option: DSP)
Useable Surface Area: > 90%

 

4 inch GaN Templates:


Dimensions:Ф 50.8mm ± 0.1mm
Thickness: 4 µm, 20 µm; 4 µm
Orientation: C-plane(0001) ± 0.5°
Conduction Type: N-type(Undoped); N-type(Si-doped); P-type(Mg-doped)
Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm: ~ 10 Ω·cm
Carrier Concentration: < 5x1017 cm-3; > 1x1018 cm-3; > 6x1016 cm-3
Mobility: ~ 300cm2/V·s; ~ 200 cm2/V·s; ~ 10 cm2/V·s
Dislocation Density:Less than 5x108 cm-2
Substrate structure:GaN on Sapphire (Standard: SSP Option: DSP)
Useable Surface Area:> 90%

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Advanced Material Technologies(KIN GROUP) Co.,Ltd

Contact Person: Mr. Lin Yue

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